At the MIT.nano facility, researchers demonstrated a newly developed low-temperature process for growing 2D transition metal dichalcogenide (TMD) materials right on an 8-inch wafer. Their successful integration of a 2D material on a silicon wafer can lead to the development of more powerful computer chips potentially benefiting commercial markets.
The post MIT Researchers Successfully Integrate 2D Materials Directly on Silicon Circuit appeared first on HPCwire.
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